HIGH-POWER INGAASP/GAAS 0.8-MU-M LASER-DIODES AND PECULIARITIES OF OPERATIONAL CHARACTERISTICS

High-power operation of 3 W in pulse mode, 750 mW in quasi-continuous wave and 650 mW in continuous wave per uncoated facet from 100-mum apertune has been demonstrated for 1-mm-long cavity InGaAsP/GaAs 808-nm laser diodes prepared by low-pressure metalorganic chemical vapor deposition. Threshold current density of 300 A/cm2, differential efficiency of 1.1 W/A, T0 = 155-degrees-C, transverse beam divergence of 27-degrees, and less than 2-nm linewidth at 808 nm have been measured. No degradation has been observed after 1000 h of operation in a quasi-continuous wave regime.