共 2 条
- [1] Hurley, Et al., IEEE Elec. Dev. Letts., 13 EDL, 5, (1992)
- [2] McDaid, Et al., Solid State Elec, 32, 1, (1989)
A STUDY OF HIGH-FIELD CONDUCTION AND ELECTRON TRAPPING IN BURIED OXIDES PRODUCED BY SIMOX TECHNOLOGY
被引：4
作者：
WAINWRIGHT, SP
NGWA, C
HALL, S
ECCLESTON, W
机构：
[1] Dept. of Electrical Engineering and Electronics, University of Liverpool, Liverpool, L69 3BX
关键词：
D O I：
10.1016/0167-9317(93)90197-D
中图分类号：
TM [电工技术];
TN [电子技术、通信技术];
学科分类号：
0808 ;
0809 ;
摘要：
Low Fowler-Nordheim barrier heights measured at SIMOX interfaces are attributed to points of field intensification causing preferential injection and an associated reduced injection area. This was taken into account in the analysis of constant voltage stress (CVS) experiments from which oxide electron trapping parameters were derived, Comparison of parameters from CVS and avalanche injection experiments indicate the efficacy of the CVS technique in identifying trap species for SOI.
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页码：399 / 402
页数：4
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