EFFECT OF INGAAS/INP STRAINED LAYER SUPERLATTICE IN INP-ON-SI

被引：17

作者：

ITAKURA, H

SUZUKI, T

JIANG, ZK

SOGA, T

JIMBO, T

UMENO, M

机构：

[1] Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Showa-ku, Nagoya, 466, Gokiso-cho

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 115卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)90730-S

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In this paper, heteroepitaxial growth of InP on Si(100) substrates with GaAs/GaP intermediate layers using low-pressure metalorganic chemical vapor deposition (LP-MOCVD) is studied. A five-period (150 angstrom/150 angstrom) InxGa1-xAs/InP (0.13 < x < 0.36) strained layer superlattice (SLS) was grown between the InP and GaAs layers. The effect of the composition of the InxGa1-xAs/InP SLS was investigated by photoluminescence (PL), etch-pit-density (EPD) and cross-sectional transmission electron microscopy (TEM) methods. InP/Si with InxGa1-xAs/InP (x = 0.23) SLS exhibited the best results in PL and EPD evaluations. The PL-intensity divided by the electron concentration of InP/Si with an InxGa1-xAs/InP (x = 0.23) SLS is 70% larger than without the SLS. The EPD of InP/Si with a SLS (x = 0.23) is 4.1 x 10(7) cm-2, which is lower than that without a SLS (1.0 x 10(8) cm-2).

引用

页码：154 / 157

页数：4

共 8 条

[1] ENERGY BAND-GAP SHIFT WITH ELASTIC STRAIN IN GAXIN1-XP EPITAXIAL LAYERS ON (001) GAAS SUBSTRATES [J].

ASAI, H ;

OE, K .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) :2052-2056

[2] CROSSHATCHED SURFACE-MORPHOLOGY IN STRAINED III-V SEMICONDUCTOR-FILMS [J].

CHANG, KH ;

GIBALA, R ;

SROLOVITZ, DJ ;

BHATTACHARYA, PK ;

MANSFIELD, JF .

JOURNAL OF APPLIED PHYSICS, 1990, 67 (09) :4093-4098

[3] ETCH PIT OBSERVATION OF INP [J].

NISHIKAWA, H ;

SOGA, T ;

JIMBO, T ;

MIKURIYA, N ;

UMENO, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1989, 28 (05) :941-942

[4] STRAINED-LAYER SUPER-LATTICES FROM LATTICE MISMATCHED MATERIALS [J].

OSBOURN, GC .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) :1586-1589

[5] CALCULATION OF CRITICAL LAYER THICKNESS VERSUS LATTICE MISMATCH FOR GEXSI1-X/SI STRAINED-LAYER HETEROSTRUCTURES [J].

PEOPLE, R ;

BEAN, JC .

APPLIED PHYSICS LETTERS, 1985, 47 (03) :322-324

[6]

POLLAK FH, 1968, PHYS REV, V172, P8166

[7]

RAZEGHI M, 1989, MOCVD CHALLENGE

[8] TRANSMISSION ELECTRON-MICROSCOPY CHARACTERIZATION OF THE INITIAL-STAGE OF EPITAXIAL-GROWTH OF GAP ON SI BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

SOGA, T ;

GEORGE, T ;

SUZUKI, T ;

JIMBO, T ;

UMENO, M ;

WEBER, ER .

APPLIED PHYSICS LETTERS, 1991, 58 (19) :2108-2110

← 1 →