HOT-ELECTRON-INDUCED DEGRADATION AND POSTSTRESS RECOVERY OF BIPOLAR-TRANSISTOR GAIN AND NOISE CHARACTERISTICS

被引：18

作者：

SUN, CJ ^{[1
]}

REINHARD, DK ^{[1
]}

GROTJOHN, TA ^{[1
]}

HUANG, CJ ^{[1
]}

YU, CCW ^{[1
]}

机构：

[1] IBM CORP,KINGSTON,NY 12401

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1992年 / 39卷 / 09期

关键词：

D O I：

10.1109/16.155892

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Hot-carrier-induced degradation and post-stress recovery of bipolar transistor gain and low-frequency noise are investigated. Forward-bias-induced recovery allows a partial reversal of degradation and is believed to be due primarily to a reduction of the number of electrons trapped in the oxide. Thermal annealing, which is capable of removing interface states as well, produces a larger recovery of both gain and noise performance measures.

引用

页码：2178 / 2180

页数：3

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