FIELD-DEPENDENCE OF THE AREA-DENSITY OF COLD ELECTRON-EMISSION SITES ON BROAD-AREA CVD DIAMOND FILMS

被引：226

作者：

XU, NS ^{[1
]}

LATHAM, RV ^{[1
]}

TZENG, Y ^{[1
]}

机构：

[1] AUBURN UNIV,DEPT ELECT ENGN,AUBURN,AL 36849

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 18期

关键词：

FIELD EMISSION ELECTRON MICROSCOPY;

D O I：

10.1049/el:19931063

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high area density of field-induced electron emission sites has been observed on broad-area (12 mm in diameter) CVD diamond films deposited on molybdenum substrates. Furthermore, it was found that the density increased with the electric field applied to the surface of the films. These findings indicate that the CVD diamond film has to be seen as a potentially favoured candidate among electronic materials for the development of new types of cold cathode electron source.

引用

页码：1596 / 1597

页数：2

共 7 条

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