DETECTION OF C-H BONDS IN CRYSTALLINE ALPHA-SIC BY IR-ABSORPTION MEASUREMENTS

被引：6

作者：

ROTTNER, K

HELBIG, R

机构：

[1] Institut für angewandte Physik, Universität Erlangen, Erlangen, D-91508

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1994年 / 59卷 / 04期

关键词：

D O I：

10.1007/BF00331723

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In SiC epilayers sp3 C-H bond vibration bands were detected by infrared transmittance measurements. The absorption constants of the transmission peaks are related to the temperature at which the layers were grown and decrease with increasing growth temperature. The absorption centers vanish when the epilayer is removed or after annealing the sample at temperatures very much lower than the growth temperatures in a hydrogen-free atmosphere. These absorption centers are connected to hydrogen on silicon lattice sites.

引用

页码：427 / 429

页数：3

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