ELECTRICAL-PROPERTIES OF ION-IMPLANTED POLYACETYLENE FILMS

被引：4

作者：

KOSHIDA, N

SUZUKI, Y

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 12期

关键词：

D O I：

10.1063/1.338244

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5487 / 5488

页数：2

共 12 条

[1]

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[2]

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[3]

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[5] METAL POLYACETYLENE SCHOTTKY-BARRIER DIODES [J].

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[6]

KOBAYASHI Y, 1981, 22ND M 142 COMM JAP

[7] APPLICATION OF ION-IMPLANTATION FOR DOPING OF POLYACETYLENE FILMS [J].

KOSHIDA, N ;

WACHI, Y .

APPLIED PHYSICS LETTERS, 1984, 45 (04) :436-437

[8]

Lindhard J., 1963, MAT FYS MEDD DAN VID, V33, P1, DOI DOI 10.1002/ADMA.200904153

[9] ELECTRICAL-CONDUCTIVITY OF SBF5 DOPED POLYACETYLENE [J].

ROLLAND, M ;

BERNIER, P ;

DISI, M ;

LINAYA, C ;

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SCHUE, F ;

FABRE, JM ;

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JOURNAL DE PHYSIQUE LETTRES, 1980, 41 (07) :L165-L168

[10]

SUZUKI Y, 1986, J CHEM SOC JPN, V3, P295

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