PROCESSING TECHNIQUES FOR REFRACTORY INTEGRATED-CIRCUITS

被引：2

作者：

PRZYBYSZ, JX

BLAUGHER, RD

BUTTYAN, J

机构：

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1989年 / 25卷 / 02期

关键词：

D O I：

10.1109/20.92488

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1127 / 1130

页数：4

共 9 条

[1]

Gheewala T. R., 1979, IEDM, P481

[2] COMPRESSIVE STRESS TRANSITION IN AL, V, ZR, NB AND W METAL-FILMS SPUTTERED AT LOW WORKING PRESSURES [J].

HOFFMAN, DW ;

THORNTON, JA .

THIN SOLID FILMS, 1977, 45 (02) :387-396

[3]

Jewett R. E, 1982, ELECT RES LAB INTERN

[4]

Newton AR., 1981, SPICE VERSION 2G USE

[5]

PRZYBYSZ JX, 1988 APPL SUP C

[6]

PRZYBYSZ JX, 1987 INT SUP EL C TO, P53

[7] FABRICATION AND PERFORMANCE OF ALL NBN JOSEPHSON JUNCTION CIRCUITS [J].

RADPARVAR, M ;

BERRY, MJ ;

DRAKE, RE ;

FARIS, SM ;

WHITELEY, SR ;

YU, LS .

IEEE TRANSACTIONS ON MAGNETICS, 1987, 23 (02) :1480-1483

[8] TEMPERATURE-DEPENDENT PROPERTIES OF NIOBIUM NITRIDE JOSEPHSON TUNNEL-JUNCTIONS [J].

SHOJI, A ;

AOYAGI, M ;

KOSAKA, S ;

SHINOKI, F .

IEEE TRANSACTIONS ON MAGNETICS, 1987, 23 (02) :1464-1471

[9] INTRINSIC STRESS OF MAGNETRON-SPUTTERED NIOBIUM FILMS [J].

WU, CT .

THIN SOLID FILMS, 1979, 64 (01) :103-110

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