Cathodoluminescence of Ion Implanted SiC

被引:6
作者
Brander, R. W. [1 ]
Callaghan, M. P. [1 ]
机构
[1] Gen Elect Co Ltd, Semicond Labs, Hirst Res Ctr, Wembley, Middx, England
来源
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1970年 / 3卷 / 02期
关键词
D O I
10.1002/pssa.19700030243
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:K143 / K146
页数:4
相关论文
共 5 条
[1]   SOLUTION GROWN SIC P-N JUNCTIONS [J].
BRANDER, RW ;
SUTTON, RP .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1969, 2 (03) :309-&
[2]  
BRANDER RW, 1965, GECJ SCIENCE TECH, V32, P15
[3]   DIODES IN SILICON CARBIDE BY ION IMPLANTATION [J].
DUNLAP, HL ;
MARSH, OJ .
APPLIED PHYSICS LETTERS, 1969, 15 (10) :311-+
[4]   PHOTOLUMINESCENCE OF NITROGEN-EXCITON COMPLEXES IN 6H SIC [J].
HAMILTON, DR ;
CHOYKE, WJ ;
PATRICK, L .
PHYSICAL REVIEW, 1963, 131 (01) :127-&
[5]  
TODKILL A, 1969, MATER RES B, V4, P293