PREPARATION AND THERMOLYSIS OF A SINGLE-SOURCE PRECURSOR TO GALLIUM-ARSENIDE PHOSPHIDE

被引：10

作者：

AUBUCHON, SR

LUBE, MS

WELLS, RL

机构：

[1] Department of Chemistry, Duke University, Durham, North Carolina

来源：

CHEMICAL VAPOR DEPOSITION | 1995年 / 1卷 / 01期

关键词：

D O I：

10.1002/cvde.19950010106

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Communication: Stoichiometrically controlled, reproducible ternary 13-15 semiconductor materials such as GaAsP can now be produced from a single source precursor, Although these materials can be formulated using conventional multi-precursor CVD techniques, control over the stoichiometry, and thus the behavior of the semiconductors, is difficult. The synthesis and performance of the new single-source precursor are presented.

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页码：28 / &

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