NUMERICAL CALCULATIONS OF CAPACITANCE OF LINEARLY GRADED SI P-N JUNCTIONS

被引：18

作者：

NUYTS, W

VANOVERS.RJ

机构：

[1] Laboratorium voor Fysika en Elektronica van de Halfgeleiders, Departement Elektriciteit Katholieke Universiteit Leuven Kardinaal Mercierlaan, 94, He ver lee

来源：

ELECTRONICS LETTERS | 1969年 / 5卷 / 03期

关键词：

D O I：

10.1049/el:19690037

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Exact calculations are made of the capacitance of linearly graded Si p-n junctions, taking the influence of electrons and holes into account. The results agree well with the experimental data for gradients of less than 1022cm-4. The discrepancies for gradients larger than 1022cm-4 are probably due an interface-state mechanism. © 1969, The Institution of Electrical Engineers. All rights reserved.

引用

页码：54 / &

共 6 条

[1] CHANG YF, 1967, SOLID STATE ELECTRON, V10, P281
[2] GUMMEL HK, 1964, IEEE T, VED11, P455
[3] POTENTIAL DISTRIBUTION AND CAPACITANCE OF A GRADED P-N JUNCTION
MORGAN, SP
SMITS, FM
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (06): : 1573 - 1602
[4] EFFECTS OF ELECTRONS AND HOLES ON TRANSITION LAYER CHARACTERISTICS OF LINEARLY GRADED P-N JUNCTIONS
SAH, CT
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1961, 49 (03): : 603 - &
[5] THE THEORY OF P-N JUNCTIONS IN SEMICONDUCTORS AND P-N JUNCTION TRANSISTORS
SHOCKLEY, W
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03): : 435 - 489
[6] VANOVERSTRAETEN R, 1968, IEEE T ELECTRON DEVI, VED15, P164

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