INVESTIGATION OF AMORPHOUS A-SI-H A-SI1-XCX-H MULTI-QUANTUM-WELL STRUCTURES

被引:12
作者
DESETA, M [1 ]
FIORINI, P [1 ]
EVANGELISTI, F [1 ]
ARMIGLIATO, A [1 ]
机构
[1] CNR,IST LAMEL,I-40126 BOLOGNA,ITALY
关键词
Light--Absorption - Magnetooptical Effects - Photoconductivity - Quantum Theory - Silicon Carbide--Thin Films;
D O I
10.1016/0749-6036(89)90271-1
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
a-Si:H/a-Si1-xCx:H multi-quantum-well structures have been grown and investigated. Optical transmission and electroabsorption measurements show that the optical gap increases with decreasing a-Si:H layer thickness. This behaviour is explained in terms of quantum confinement effects. An increase of the Urbach tail and a decrease of the photoconductivity were also observed with decreasing silicon thickness. Both effects have been attributed to the observed increase of the gap state density.
引用
收藏
页码:149 / 152
页数:4
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