SRLAGAO4 - CZOCHRALSKI CRYSTAL-GROWTH AND BASIC PROPERTIES

被引：46

作者：

DABKOWSKI, A

DABKOWSKA, HA

GREEDAN, JE

机构：

[1] Institute For Materials Research, McMaster University, Hamilton, Ont. L8S 4M1

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 132卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(93)90263-V

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Single crystals of SrLaGaO4 have been grown by the Czochralski method. This material melts congruently at 1520-degrees-C. It has the K2NiF4 structure (14/mmm) with lattice parameters a = 3.84 angstrom and c = 12.68 angstrom. According to the EPMA analysis, the crystals obtained contained more SrO and Ga2O3 and less La2O3 then expected from the stoichiometric composition. These crystals are applicable as substrates for high temperature superconducting thin films.

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页码：205 / 208

页数：4

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