ACCURATE REFRACTIVE-INDEX MEASUREMENTS OF DOPED AND UNDOPED INP BY A GRATING COUPLING TECHNIQUE

被引：62

作者：

MARTIN, P ^{[1
]}

SKOURI, EM ^{[1
]}

CHUSSEAU, L ^{[1
]}

ALIBERT, C ^{[1
]}

BISSESSUR, H ^{[1
]}

机构：

[1] ALCATEL ALSTHOM RECH,F-91460 MARCOUSSIS,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 07期

关键词：

D O I：

10.1063/1.114723

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Accurate measurements of InP refractive indices in the 1300-1600 nm wavelength range are reported. They are obtained using the grating coupling technique within an asymmetrical slab waveguide where an intrinsic InP guiding layer was grown on a doped InP substrate (N = 2 X 10(18) cm(-3)). Modal indices are obtained with an absolute precision of a few 10(-4) from either guided or reflected waves, Bulk refractive indices of intrinsic and N-doped InP are then deduced from the allowed modes propagating in the layered structure. With sample temperature maintained to within 0.01 K, InP bulk indices are obtained with a typical accuracy of 5 x 10(-4). Furthermore, a (2.02 +/- 0.02) 10(-4) K-1 refractive index temperature coefficient has been measured for bulk InP at room temperature. (C) 1995 American Institute of Physics.

引用

页码：881 / 883

页数：3

共 14 条

[1]

ALIBERT C, 1995, SPIE P, V2449, P300

[2] TEMPERATURE-DEPENDENCE OF THE REFRACTIVE-INDEX IN SEMICONDUCTORS [J].