A COMPARATIVE-STUDY OF THE KIRK EFFECT IN GAAS AND SI BIPOLAR JUNCTION TRANSISTORS

被引：7

作者：

LEE, J ^{[1
]}

KIM, B ^{[1
]}

KIM, Y ^{[1
]}

PARK, S ^{[1
]}

机构：

[1] RES INST SCI & TECHNOL, POHANG 790600, SOUTH KOREA

来源：

SOLID-STATE ELECTRONICS | 1994年 / 37卷 / 08期

关键词：

D O I：

10.1016/0038-1101(94)90156-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The Kirk effect in GaAs BJTs has been compared with that of Si BJTs using a PISCES-IIB simulator. The simulation results have shown that, due to the high election mobility and velocity overshoot effect of GaAs, the Kirk current density of GaAs BJTs is about two times larger than that of comparable Si BJTs. It is shown that the saturation velocity model of the Kirk effect is very accurate for Si BJTs, but not for GaAs BJTs. A modified structure GaAs BJT with n+-n- collector layer, which is generally believed to have a higher Kirk current, was also studied. We have found for thal case that a retarding field is formed at the n+-n- interface and that the Kirk current does not increase at all.

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页码：1485 / 1490

页数：6

相关论文

共 23 条

[1] HETEROJUNCTION BIPOLAR-TRANSISTORS FOR MICROWAVE AND MILLIMETER-WAVE INTEGRATED-CIRCUITS [J].

ASBECK, PM ;

CHANG, MF ;

WANG, KC ;

MILLER, DL ;

SULLIVAN, GJ ;

SHENG, NH ;

SOVERO, E ;

HIGGINS, JA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (12) :2571-2579

[2] BREAKDOWN SPEED CONSIDERATIONS IN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH SPECIAL COLLECTOR DESIGNS [J].

CHAU, HF ;

HU, J ;

PAVLIDIS, D ;

TOMIZAWA, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (12) :2711-2719

[3] HIGH-FREQUENCY OUTPUT CHARACTERISTICS OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS FOR LARGE-SIGNAL APPLICATIONS [J].

CHEN, J ;

GAO, GB ;

UNLU, MS ;

MORKOC, H .

SOLID-STATE ELECTRONICS, 1991, 34 (11) :1263-1273

[4] DOUBLE-LAYER COLLECTOR FOR HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

GAO, GB ;

UNLU, MS ;

CHEN, J ;

MAZHARI, B ;

ADOMI, K ;

LIU, GX ;

FAN, ZF ;

MORKOC, H .

SOLID-STATE ELECTRONICS, 1992, 35 (01) :57-60

[5] THE EFFECTS OF BASE DOPANT DIFFUSION ON DC AND RF CHARACTERISTICS OF INGAAS/INALAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

HAFIZI, M ;

METZGER, RA ;

STANCHINA, WE ;

RENSCH, DB ;

JENSEN, JF ;

HOOPER, WW .

IEEE ELECTRON DEVICE LETTERS, 1992, 13 (03) :140-142

[6] NUMERICAL-SIMULATION OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH VARIOUS COLLECTOR PARAMETERS [J].

HORIO, K ;

IWATSU, Y ;

YANAI, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (04) :617-624

[7] SELF-CONSISTENT PARTICLE SIMULATION FOR (ALGA)AS/GAAS HBTS UNDER HIGH BIAS CONDITIONS [J].

KATOH, R ;

KURATA, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (10) :2122-2128

[8] SELF-CONSISTENT PARTICLE SIMULATION FOR (ALGA)AS/GAAS HBTS WITH IMPROVED BASE-COLLECTOR STRUCTURES [J].

KATOH, R ;

KURATA, M ;

YOSHIDA, J .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (05) :846-853

[9]

KIRK CT, 1962, IRE T ELECTRON DEV, V9, P164

[10] BETA CUTOFF FREQUENCIES OF JUNCTION TRANSISTORS [J].

LINDMAYER, J ;

WRIGLEY, CY .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1962, 50 (02) :194-&