OXIDE AND INTERFACE DEGRADATION AND BREAKDOWN UNDER MEDIUM AND HIGH-FIELD INJECTION CONDITIONS - A CORRELATION STUDY

被引:28
作者
DEGRAEVE, R
GROESENEKEN, G
DEWOLF, I
MAES, HE
机构
[1] IMEC, 3001 Leuven
关键词
D O I
10.1016/0167-9317(95)00065-G
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Oxide degradation and breakdown are studied using Substrate Hot Electron (SHE) and Fowler-Nordheim (FN) injection techniques. It is shown that the generation of electron traps during stress and breakdown are identical with both techniques and therefore SHE-injection can be used to study breakdown mechanisms at medium oxide fields that are not accessible with FN-injection. Breakdown is found to occur when a critical electron trap density is reached. In the high field range, it is shown that this critical trap density corresponds to a critical hole fluence, linking the models based on electron trap generation and on hole fluence together.
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收藏
页码:313 / 316
页数:4
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