THEORY AND DESIGN OF MOS CAPACITOR PULL-UP CIRCUITS

被引：3

作者：

CRAWFORD, RH

BAZIN, B

机构：

[1] Texas Instruments Incorporated, Tex.

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1969年 / SC 4卷 / 03期

关键词：

D O I：

10.1109/JSSC.1969.1049977

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Capacitor pull-up circuitry is another addition to the numerous techniques the MOS engineer has available as a design tool. This “ratioless-” type circuit offers the potential advantage of high-speed two-phase operation. A complete circuit description and analysis is presented. Included in the analysis are topics covering bipolar injection effects, calculation of optimum size devices, stair-step charging wave forms that have been observed, and overlap capacitance effects. Measured speed performance is below the predicted value and the discrepancy appears to be caused by minority carrier injection into the substrate. Copyright © 1969 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：145 / &

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