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EVALUATION OF BURIED-CHANNEL LAYER IN BCCD
被引:3
作者
:
YAMADA, T
论文数:
0
引用数:
0
h-index:
0
YAMADA, T
OKANO, H
论文数:
0
引用数:
0
h-index:
0
OKANO, H
SUZUKI, N
论文数:
0
引用数:
0
h-index:
0
SUZUKI, N
机构
:
来源
:
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
1978年
/ 25卷
/ 05期
关键词
:
D O I
:
10.1109/T-ED.1978.19126
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:544 / 546
页数:3
相关论文
共 6 条
[1]
MODELING OF AN ION-IMPLANTED SILICON-GATE DEPLETION-MODE IGFET
[J].
HUANG, JST
论文数:
0
引用数:
0
h-index:
0
机构:
HONEYWELL INC,SOLID STATE ELECTR CTR,PLYMOUTH,MN 55441
HONEYWELL INC,SOLID STATE ELECTR CTR,PLYMOUTH,MN 55441
HUANG, JST
;
TAYLOR, GW
论文数:
0
引用数:
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h-index:
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机构:
HONEYWELL INC,SOLID STATE ELECTR CTR,PLYMOUTH,MN 55441
HONEYWELL INC,SOLID STATE ELECTR CTR,PLYMOUTH,MN 55441
TAYLOR, GW
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1975,
22
(11)
:995
-1001
[2]
KOSONOCKY WF, 1975, RCA REV, V36, P566
[3]
SIMPLE MODEL OF A BURIED CHANNEL CHARGE COUPLED DEVICE
[J].
LEES, AW
论文数:
0
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机构:
PLESSEY CO LTD,ALLEN CLARK RES CTR,TOWCESTER,NORTHAMPTON,ENGLAND
PLESSEY CO LTD,ALLEN CLARK RES CTR,TOWCESTER,NORTHAMPTON,ENGLAND
LEES, AW
;
RYAN, WD
论文数:
0
引用数:
0
h-index:
0
机构:
PLESSEY CO LTD,ALLEN CLARK RES CTR,TOWCESTER,NORTHAMPTON,ENGLAND
PLESSEY CO LTD,ALLEN CLARK RES CTR,TOWCESTER,NORTHAMPTON,ENGLAND
RYAN, WD
.
SOLID-STATE ELECTRONICS,
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A SPREADING RESISTANCE TECHNIQUE FOR RESISTIVITY MEASUREMENTS ON SILICON
[J].
MAZUR, RG
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JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
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113
(03)
:255
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[5]
C-V CHARACTERISTICS OF ION-IMPLANTED DEPLETION IGFETS AND BURIED CHANNEL CCDS
[J].
TAYLOR, GW
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机构:
HONEYWELL INC,CTR SOLID STATE ELECTR,PLYMOUTH,MN 55441
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TAYLOR, GW
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SOLID-STATE ELECTRONICS,
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[6]
BURIED CHANNEL CHARGE COUPLED DEVICE
[J].
WALDEN, RH
论文数:
0
引用数:
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h-index:
0
WALDEN, RH
;
SCHRYER, NL
论文数:
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引用数:
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h-index:
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SCHRYER, NL
;
SMITH, GE
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SMITH, GE
;
STRAIN, RJ
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BELL SYSTEM TECHNICAL JOURNAL,
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:1635
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←
1
→
共 6 条
[1]
MODELING OF AN ION-IMPLANTED SILICON-GATE DEPLETION-MODE IGFET
[J].
HUANG, JST
论文数:
0
引用数:
0
h-index:
0
机构:
HONEYWELL INC,SOLID STATE ELECTR CTR,PLYMOUTH,MN 55441
HONEYWELL INC,SOLID STATE ELECTR CTR,PLYMOUTH,MN 55441
HUANG, JST
;
TAYLOR, GW
论文数:
0
引用数:
0
h-index:
0
机构:
HONEYWELL INC,SOLID STATE ELECTR CTR,PLYMOUTH,MN 55441
HONEYWELL INC,SOLID STATE ELECTR CTR,PLYMOUTH,MN 55441
TAYLOR, GW
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1975,
22
(11)
:995
-1001
[2]
KOSONOCKY WF, 1975, RCA REV, V36, P566
[3]
SIMPLE MODEL OF A BURIED CHANNEL CHARGE COUPLED DEVICE
[J].
LEES, AW
论文数:
0
引用数:
0
h-index:
0
机构:
PLESSEY CO LTD,ALLEN CLARK RES CTR,TOWCESTER,NORTHAMPTON,ENGLAND
PLESSEY CO LTD,ALLEN CLARK RES CTR,TOWCESTER,NORTHAMPTON,ENGLAND
LEES, AW
;
RYAN, WD
论文数:
0
引用数:
0
h-index:
0
机构:
PLESSEY CO LTD,ALLEN CLARK RES CTR,TOWCESTER,NORTHAMPTON,ENGLAND
PLESSEY CO LTD,ALLEN CLARK RES CTR,TOWCESTER,NORTHAMPTON,ENGLAND
RYAN, WD
.
SOLID-STATE ELECTRONICS,
1974,
17
(11)
:1163
-1169
[4]
A SPREADING RESISTANCE TECHNIQUE FOR RESISTIVITY MEASUREMENTS ON SILICON
[J].
MAZUR, RG
论文数:
0
引用数:
0
h-index:
0
MAZUR, RG
;
DICKEY, DH
论文数:
0
引用数:
0
h-index:
0
DICKEY, DH
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1966,
113
(03)
:255
-&
[5]
C-V CHARACTERISTICS OF ION-IMPLANTED DEPLETION IGFETS AND BURIED CHANNEL CCDS
[J].
TAYLOR, GW
论文数:
0
引用数:
0
h-index:
0
机构:
HONEYWELL INC,CTR SOLID STATE ELECTR,PLYMOUTH,MN 55441
HONEYWELL INC,CTR SOLID STATE ELECTR,PLYMOUTH,MN 55441
TAYLOR, GW
.
SOLID-STATE ELECTRONICS,
1976,
19
(06)
:495
-503
[6]
BURIED CHANNEL CHARGE COUPLED DEVICE
[J].
WALDEN, RH
论文数:
0
引用数:
0
h-index:
0
WALDEN, RH
;
SCHRYER, NL
论文数:
0
引用数:
0
h-index:
0
SCHRYER, NL
;
SMITH, GE
论文数:
0
引用数:
0
h-index:
0
SMITH, GE
;
STRAIN, RJ
论文数:
0
引用数:
0
h-index:
0
STRAIN, RJ
;
MCKENNA, J
论文数:
0
引用数:
0
h-index:
0
MCKENNA, J
;
KRAMBECK, RH
论文数:
0
引用数:
0
h-index:
0
KRAMBECK, RH
.
BELL SYSTEM TECHNICAL JOURNAL,
1972,
51
(07)
:1635
-+
←
1
→