DISLOCATION NUCLEATION AND PROPAGATION IN SI0.95GE0.05 LAYERS ON SILICON

[1] RELAXATION OF STRAINED-LAYER SEMICONDUCTOR STRUCTURES VIA PLASTIC-FLOW [J]. APPLIED PHYSICS LETTERS, 1987, 51 (17) : 1325 - 1327

[2] CORRECTION [J]. APPLIED PHYSICS LETTERS, 1988, 52 (10) : 852 - 852

[3] GIBBINGS CJ, 1988, MATERIALS RES SOC S, V102, P311

[4] IYER SS, 1988, 2ND P SI MBE C, P114

[5] MATTHEWS JW, 1974, J CRYST GROWTH, V27, P118, DOI 10.1016/0022-0248(74)90424-2

[6] MCGILL TC, 1988, 2ND P INT S SI MOL B, P1

[7] CORRECTION [J]. APPLIED PHYSICS LETTERS, 1986, 49 (04) : 229 - 229

[8] CALCULATION OF CRITICAL LAYER THICKNESS VERSUS LATTICE MISMATCH FOR GEXSI1-X/SI STRAINED-LAYER HETEROSTRUCTURES [J]. APPLIED PHYSICS LETTERS, 1985, 47 (03) : 322 - 324

[9] CRITICAL STRESSES FOR SIXGE1-X STRAINED-LAYER PLASTICITY [J]. PHYSICAL REVIEW LETTERS, 1987, 59 (21) : 2455 - 2458

[10] TUPPEN CG, IN PRESS J CRYST GRO

[1] RELAXATION OF STRAINED-LAYER SEMICONDUCTOR STRUCTURES VIA PLASTIC-FLOW [J]. APPLIED PHYSICS LETTERS, 1987, 51 (17) : 1325 - 1327

[2] CORRECTION [J]. APPLIED PHYSICS LETTERS, 1988, 52 (10) : 852 - 852

[3] GIBBINGS CJ, 1988, MATERIALS RES SOC S, V102, P311

[4] IYER SS, 1988, 2ND P SI MBE C, P114

[5] MATTHEWS JW, 1974, J CRYST GROWTH, V27, P118, DOI 10.1016/0022-0248(74)90424-2

[6] MCGILL TC, 1988, 2ND P INT S SI MOL B, P1

[7] CORRECTION [J]. APPLIED PHYSICS LETTERS, 1986, 49 (04) : 229 - 229

[8] CALCULATION OF CRITICAL LAYER THICKNESS VERSUS LATTICE MISMATCH FOR GEXSI1-X/SI STRAINED-LAYER HETEROSTRUCTURES [J]. APPLIED PHYSICS LETTERS, 1985, 47 (03) : 322 - 324

[9] CRITICAL STRESSES FOR SIXGE1-X STRAINED-LAYER PLASTICITY [J]. PHYSICAL REVIEW LETTERS, 1987, 59 (21) : 2455 - 2458

[10] TUPPEN CG, IN PRESS J CRYST GRO