ELLIPSOMETRY STUDY OF THE NUCLEATION OF SI EPITAXY BY ELECTRON-CYCLOTRON-RESONANCE PLASMA CHEMICAL-VAPOR-DEPOSITION

被引：15

作者：

LI, M ^{[1
]}

HU, YZ ^{[1
]}

IRENE, EA ^{[1
]}

LIU, L ^{[1
]}

CHRISTENSEN, KN ^{[1
]}

MAHER, DM ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT MAT SCI & ENGN,RALEIGH,NC 27695

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1995年 / 13卷 / 01期

关键词：

D O I：

10.1116/1.588000

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The formation and evolution of Si nuclei on the Si(100) surface at 600 and 700°C were observed in a microwave electron cyclotron resonance plasma chemical vapor deposition system, using both real-time in situ single wavelength and spectroscopic ellipsometry combined with high-resolution cross-sectional transmission electron microscopy and secondary ion mass spectroscopy. The deposited Si layers are epitaxial, and decidedly different nucleation behavior is seen at 600 and 700 °C. The experimental ellipsometry results were compared with simulations and the results show that temperature has a profound effect on the initial nucleation and growth, and the different interface structures that are observed are attributable to impurities.

引用

页码：105 / 110

页数：6