EFFECTS OF CHEMICAL-COMPOSITION ON THE ELECTRICAL-PROPERTIES OF NO-NITRIDED SIO2

被引：96

作者：

BHAT, M ^{[1
]}

HAN, LK ^{[1
]}

WRISTERS, D ^{[1
]}

YAN, J ^{[1
]}

KWONG, DL ^{[1
]}

FULFORD, J ^{[1
]}

机构：

[1] ADV MICRO DEVICES INC,AUSTIN,TX 78741

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 10期

关键词：

D O I：

10.1063/1.113244

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The impact of nitrogen (N) concentration and distribution on the electrical and reliability properties of rapid-thermally NO-annealed oxides is studied. The use of NO-annealing of thermally grown SiO2 provides an excellent way to isolate the effects of N, since this method allows for the incorporation of varying N profiles in the oxide without a simultaneous increase in dielectric thickness. Results show that the electrical properties of the dielectric under gate and substrate Fowler-Nordheim injection are highly sensitive to the N profile in the dielectric. While interface endurance (ΔDit) is seen to improve monotonically with increasing N concentrations for both +Vg and -Vg, the same is not observed for charge-to-breakdown (QBD) properties. It is found that although QBD improves with NO nitridation under +Vg, it shows a turnaround behavior under -Vg, i.e., for a 10-s NO-annealed oxide the QBD value is improved over control oxide while further nitridation is seen to degrade QBD under -Vg. The presence of bulk N and the nonuniform N distribution in the dielectric is responsible for this behavior.© 1995 American Institute of Physics.

引用

页码：1225 / 1227

页数：3

共 19 条

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