P-TYPE GAP AS A SEMICONDUCTING PHOTOELECTRODE

[1] BARD AJ, 1978, SEMICONDUCTOR LIQUID, P222

[2] CHEMICALLY DERIVATIZED N-TYPE SEMICONDUCTING GERMANIUM PHOTOELECTRODES - PERSISTENT ATTACHMENT AND PHOTOELECTROCHEMICAL ACTIVITY OF FERROCENE DERIVATIVES [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1978, 100 (17) : 5257 - 5262

[3] PHOTOELECTROLYSIS AND PHYSICAL-PROPERTIES OF SEMICONDUCTING ELECTRODE WO3 [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (05) : 1914 - 1920

[4] PREDICTION OF FLATBAND POTENTIALS AT SEMICONDUCTOR-ELECTROLYTE INTERFACES FROM ATOMIC ELECTRONEGATIVITIES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (02) : 228 - 232

[5] GERISCHER H, 1970, PHYSICAL CHEM ADV A, V9

[6] FLATBAND POTENTIAL OF CADMIUM-SULFIDE (CDS) PHOTOANODES AND ITS DEPENDENCE ON SURFACE ION EFFECTS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (12) : 1968 - 1974

[7] FLATBAND POTENTIAL OF A PARA-TYPE PHOSPHIDE ELECTRODE [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) : 3571 - 3573

[8] SURFACE STATES ON PHOSPHORUS-RICH AND GALLIUM-RICH GAP(111)P SURFACES IN ELECTRON ENERGY-LOSS SPECTROSCOPY AND PHOTOEMISSION [J]. SURFACE SCIENCE, 1975, 51 (01) : 29 - 37

[9] DETERMINATION OF SOLIDUS AND GALLIUM AND PHOSPHORUS VACANCY CONCENTRATIONS IN GAP [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (01) : 153 - 158

[10] MCGREGOR KG, 1978, 2ND INT C PHOT CONV

[1] BARD AJ, 1978, SEMICONDUCTOR LIQUID, P222

[2] CHEMICALLY DERIVATIZED N-TYPE SEMICONDUCTING GERMANIUM PHOTOELECTRODES - PERSISTENT ATTACHMENT AND PHOTOELECTROCHEMICAL ACTIVITY OF FERROCENE DERIVATIVES [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1978, 100 (17) : 5257 - 5262

[3] PHOTOELECTROLYSIS AND PHYSICAL-PROPERTIES OF SEMICONDUCTING ELECTRODE WO3 [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (05) : 1914 - 1920

[4] PREDICTION OF FLATBAND POTENTIALS AT SEMICONDUCTOR-ELECTROLYTE INTERFACES FROM ATOMIC ELECTRONEGATIVITIES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (02) : 228 - 232

[5] GERISCHER H, 1970, PHYSICAL CHEM ADV A, V9

[6] FLATBAND POTENTIAL OF CADMIUM-SULFIDE (CDS) PHOTOANODES AND ITS DEPENDENCE ON SURFACE ION EFFECTS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (12) : 1968 - 1974

[7] FLATBAND POTENTIAL OF A PARA-TYPE PHOSPHIDE ELECTRODE [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) : 3571 - 3573

[8] SURFACE STATES ON PHOSPHORUS-RICH AND GALLIUM-RICH GAP(111)P SURFACES IN ELECTRON ENERGY-LOSS SPECTROSCOPY AND PHOTOEMISSION [J]. SURFACE SCIENCE, 1975, 51 (01) : 29 - 37

[9] DETERMINATION OF SOLIDUS AND GALLIUM AND PHOSPHORUS VACANCY CONCENTRATIONS IN GAP [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (01) : 153 - 158

[10] MCGREGOR KG, 1978, 2ND INT C PHOT CONV