DEFECTS IN HIGH-PURITY GAAS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：10

作者：

FENG, SL

BOURGOIN, JC

RAZEGHI, M

机构：

[1] CNRS, Paris

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1991年 / 6卷 / 03期

关键词：

D O I：

10.1088/0268-1242/6/3/016

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Unintentionally doped epitaxial GaAs layers grown by low pressure metalorganic chemical vapour deposition have been studied by deep level transient spectroscopy. The study reveals the presence of four electron traps, the dominant one (10(13) cm-3) being associated with the so-called EL2 defect. The other ones exhibit ionization energies of 0.32, 0.47 and 0.65 eV. The 0.32 eV trap, located in the surface region, is the EL6 defect commonly encountered, like the EL2 one, in epitaxial as well as bulk materials.

引用

页码：229 / 230

页数：2

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