RESISTIVITY MEASUREMENT OF SEMICONDUCTING EPITAXIAL LAYERS BY REFLECTION OF A HYPERFREQUENCY ELECTROMAGNETIC WAVE

被引：7

作者：

BICHARA, MRE

POITEVIN, JP

机构：

来源：

关键词：

D O I：

10.1109/TIM.1964.4313421

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：323 / &

共 9 条

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[2] BATIFOL E, 1960, J PHYS RADIUM FRANCE, P207
[3] BENEDICT, 1953, PHYS REV, P1565
[4] BIARD JR, 1962, J ELECTROCHEM SOC, P705
[5] GIBSON AF, 1957, PROGRESS SEMICONDUCT, V8, P140
[6] JACOBS H, 1962, IRE INT CONVENT RE 3, P30
[7] MONTGOMERY, 1947, PRINCIPLES MICROWAVE, V8, pCH2
[8] RAMSA AP, 1959, J APPL PHYS, P1054
[9] RESISTIVITY MEASUREMENTS ON GERMANIUM FOR TRANSISTORS
VALDES, LB
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1954, 42 (02): : 420 - 427