DIRECT MEASUREMENT OF HEAVY-HOLE EXCITON TRANSPORT IN TYPE-II GAAS/ALAS SUPERLATTICES

被引：36

作者：

GILLILAND, GD

ANTONELLI, A

WOLFORD, DJ

BAJAJ, KK

KLEM, J

BRADLEY, JA

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

[2] SANDIA NATL LABS,ALBUQUERQUE,NM 87185

来源：

PHYSICAL REVIEW LETTERS | 1993年 / 71卷 / 22期

关键词：

D O I：

10.1103/PhysRevLett.71.3717

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have directly measured the transport of heavy-hole excitons in a type-II GaAs/AlAs superlattice, Our results constitute the first direct confirmation of exciton localization in type-II structures and thermal activation to more mobile states. We have also developed a quantitative model to explain our transport and kinetics results, and have obtained the nonradiative interfacial defect density.

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页码：3717 / 3720

页数：4

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