EFFECTS OF SURFACE PREPARATION ON THE ELECTRICAL AND RELIABILITY PROPERTIES OF ULTRATHIN THERMAL OXIDE

被引：9

作者：

LAI, KF

HAO, MY

CHEN, WM

LEE, JC

机构：

[1] Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Texas at Austin, Austin

来源：

IEEE ELECTRON DEVICE LETTERS | 1994年 / 15卷 / 11期

关键词：

10;

D O I：

10.1109/55.334662

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new wafer cleaning procedure has been developed for ultrathin thermal oxidation process (less-than-or-equal-to 50 angstrom). It is consisted of a conventional RCA clean and a two-dip step, first in diluted HF and then in a methanol/HF solution, with no final DI water rinse. The effectiveness of this cleaning process has been compared to other commonly used cleaning methods, based on the dielectric integrity of the ultrathin thermal oxide grown. It has been found that this two-dip method produces oxides with reduced leakage current and stress-induced leakage current, which are believed to be the critical parameters for ultrathin oxide. Furthermore, this new procedure increases dielectric breakdown field, E(bd) and charge-to-breakdown, Q(bd) (both intrinsic and defect-related values) of ultrathin oxides. The improvement is believed to be due to enhanced silicon surface passivation by hydrogen and the reduced surface micro-roughness.

引用

页码：446 / 448

页数：3

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