METALLIZATION FOR DIODE-LASERS

被引：1

作者：

ETTENBERG, M

LADANY, I

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 19卷 / 03期

关键词：

D O I：

10.1116/1.571151

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：799 / 802

页数：4

共 11 条

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APPLIED PHYSICS LETTERS, 1979, 34 (10) :668-670

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APPLIED PHYSICS LETTERS, 1979, 34 (10) :647-649

[6] CONTINUOUS OPERATION OF GAAS-GA1-XALXAS DOUBLE-HETEROSTRUCTURE LASERS WITH 30 DEGREES C HALF-LIVES EXCEEDING 1000-H [J].

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APPLIED PHYSICS LETTERS, 1973, 23 (04) :181-183

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APPLIED PHYSICS LETTERS, 1976, 28 (11) :684-686

[8] 3 DIMENSIONAL THERMAL PROBLEMS OF DOUBLE-HETEROSTRUCTURE SEMICONDUCTOR-LASERS [J].

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IWANE, G .

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[10]

LADANY I, 1975, I PHYS C SER, V24, P192

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