GALLIUM ARSENITIDE OF HIGH MOBILITY OBTAINED BY EPITAXY IN LIQUID PHASE

[1] BOLGER DE, 1966, SEP P GA AS C READ, P16

[2] PREPARATION OF HIGH PURITY EPITAXIAL GALLIUM ARSENIDE FROM ELEMENTS [J]. SOLID-STATE ELECTRONICS, 1967, 10 (05) : 507 - &

[3] DISMUKES JP, 1965, T METALL SOC AIME, V233, P672

[4] HURLE DTJ, 1961, SOLID STATES ELECTRO, P317

[5] KRANG CS, 1967, APPLIED PHYSICS LETT, V11, P171

[6] CRYSTAL GROWTH OF GAAS FROM GA BY A TRAVELING SOLVENT METHOD [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (09) : 2885 - &

[7] NELSON H, 1963, RCA REV, V24, P603

[8] RUPPRECHT H, 1966, SEP P GA AS C, P56

[9] A PRISMATIC SUBSTRUCTURE FORMED DURING SOLIDIFICATION OF METALS [J]. CANADIAN JOURNAL OF PHYSICS, 1953, 31 (01) : 15 - &

[10] WILLARDSON RK, 1962, PREPARATION OF 3.5 C

[1] BOLGER DE, 1966, SEP P GA AS C READ, P16

[2] PREPARATION OF HIGH PURITY EPITAXIAL GALLIUM ARSENIDE FROM ELEMENTS [J]. SOLID-STATE ELECTRONICS, 1967, 10 (05) : 507 - &

[3] DISMUKES JP, 1965, T METALL SOC AIME, V233, P672

[4] HURLE DTJ, 1961, SOLID STATES ELECTRO, P317

[5] KRANG CS, 1967, APPLIED PHYSICS LETT, V11, P171

[6] CRYSTAL GROWTH OF GAAS FROM GA BY A TRAVELING SOLVENT METHOD [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (09) : 2885 - &

[7] NELSON H, 1963, RCA REV, V24, P603

[8] RUPPRECHT H, 1966, SEP P GA AS C, P56

[9] A PRISMATIC SUBSTRUCTURE FORMED DURING SOLIDIFICATION OF METALS [J]. CANADIAN JOURNAL OF PHYSICS, 1953, 31 (01) : 15 - &

[10] WILLARDSON RK, 1962, PREPARATION OF 3.5 C