A SIMPLE NEW LASER DIODE-ARRAY MODEL FOR THERMAL INTERACTION ANALYSIS

被引:7
作者
MURATA, S [1 ]
NISHIMURA, K [1 ]
机构
[1] NIPPON TELEGRAPH & TEL PUBL CORP, COMMUN & INFORMAT PROC LABS, MUSASHINO, TOKYO 180, JAPAN
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.349064
中图分类号
O59 [应用物理学];
学科分类号
摘要
A simple new laser diode array model using the boundary element method is presented. This model-which needs few boundary elements and little calculation time-represents a multilayer chip as a single-layer chip and distributed heat sources as a line heat source in the center of an active region, and neglects the grooves between array elements. For three types of laser diode array chips with element spacing greater than 50-mu-m, the simple model estimates thermal interactions to within 2%. The interactive thermal influence of laser diode array packing density and the number of elements is discussed in terms of this simple model: Submounts and stems with high thermal conductivity are shown to be effective for increasing the number of elements packed within an array chip. With a type-IIa diamond submount, for example, the number of elements packed within a 400-mu-m width on an array chip can be increased from five elements 100-mu-m apart to nine elements 50-mu-m apart without increasing thermal interaction.
引用
收藏
页码:4715 / 4723
页数:9
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