CARRIER GENERATION-RECOMBINATION IN SPACE-CHARGE REGION OF A P-N-JUNCTION

被引：2

作者：

BRANCUS, D

DOLOCAN, V

机构：

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1972年 / 32卷 / 02期

关键词：

D O I：

10.1080/00207217208938278

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：137 / +

页数：1

共 10 条

[1]

BERNARD M, 1957, J ELECTRONICS, V2, P579

[2]

CHEVYCHELOV AD, 1960, SOV PHYS-SOL STATE, V1, P1102

[3] CARRIER GENERATION-RECOMBINATION IN SPACE-CHARGE REGION OF AN ASYMMETRICAL P-N JUNCTION [J].

CHOO, SC .

SOLID-STATE ELECTRONICS, 1968, 11 (11) :1069-+

[4] EFFECTS OF SPATIAL DEPENDENCE OF RECOMBINATION CENTERS ON I-V CHARACTERISTICS OF P-N JUNCTIONS [J].

DOLOCAN, V .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (10) :4095-&

[5] RECOMBINATION STATISTICS FOR AUGER EFFECTS WITH APPLICATIONS TO P-N JUNCTIONS [J].

EVANS, DA ;

LANDSBERG, PT .

SOLID-STATE ELECTRONICS, 1963, 6 (02) :169-181

[6] ELECTRON-HOLE RECOMBINATION IN GERMANIUM [J].

HALL, RN .

PHYSICAL REVIEW, 1952, 87 (02) :387-387

[7] EFFECTS OF ELECTRONS AND HOLES ON TRANSITION LAYER CHARACTERISTICS OF LINEARLY GRADED P-N JUNCTIONS [J].

SAH, CT .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1961, 49 (03) :603-&

[8] SPATIAL VARIATION OF QUASI-FERMI POTENTIALS IN P-N JUNCTIONS [J].

SAH, CT .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (12) :839-+

[9] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS [J].

SAH, CT ;

NOYCE, RN ;

SHOCKLEY, W .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09) :1228-1243

[10] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J].

SHOCKLEY, W ;

READ, WT .

PHYSICAL REVIEW, 1952, 87 (05) :835-842

← 1 →