THE EFFECT OF DEPOSITION RATE ON THE ELECTRICAL-RESISTIVITY OF THIN MANGANESE FILMS

被引:14
作者
SHIVAPRASAD, SM
ANGADI, MA
机构
关键词
D O I
10.1088/0022-3727/13/8/003
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:L157 / L159
页数:3
相关论文
共 10 条
[1]   ELECTRICAL RESISTIVITY OF YTTERBIUM THIN-FILMS [J].
BIST, BMS ;
SRIVASTA.QN .
THIN SOLID FILMS, 1973, 18 (01) :71-75
[2]  
CHOPRA KD, 1969, THIN FILM PHENOMENA, P171
[3]  
CURZON AE, 1979, THIN SOLID FILMS, V57, P157, DOI 10.1016/0040-6090(79)90422-X
[4]   The conductivity of thin metallic films according to the electron theory of metals [J].
Fuchs, K .
PROCEEDINGS OF THE CAMBRIDGE PHILOSOPHICAL SOCIETY, 1938, 34 :100-108
[5]   TEMPERATURE COEFFICIENT OF RESISTANCE IN THIN VANADIUM FILMS [J].
JAIN, SC ;
CHANDER, R .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (11) :5343-&
[6]  
LARSON D, 1971, PHYS THIN FILMS, P85
[7]  
NEUGEBAUER CA, 1964, PHYSICS THIN FILMS, V2, P11
[8]  
SHIVAPRASAD SM, UNPUBLISHED
[9]   THE MEAN FREE PATH OF ELECTRONS IN METALS [J].
SONDHEIMER, EH .
ADVANCES IN PHYSICS, 1952, 1 (01) :1-42
[10]  
1973, HDB CHEM PHYSICS, pF155