PLASMA-ETCHING FOR MICROMECHANICAL SENSOR APPLICATIONS

被引：28

作者：

RANGELOW, IW

SKOCKI, S

DUMANIA, P

机构：

[1] University of Kassel, Institute of Technical Physics, 34109 Kassel

[2] Institute of Electron Technology, 02-668 Warsaw

来源：

MICROELECTRONIC ENGINEERING | 1994年 / 23卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(94)90174-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Application of silicon dry etching for the fabrication of low-pressure sensors, acceleration sensors and silicon cantilevers with integrated deflection sensors for atomic force microscopy is presented. 3D devices, with various configurations, have been fabricated simultaneously on the same silicon wafer. Reactive Ion Etching with magnetically confined SF6/Ar/CCl2F2 plasma with a photoresist mask layer allows to combine formation of stepped membranes, bridges and cantilevers with the final stage of the standard CMOS process.

引用

页码：365 / 368

页数：4