PLASMA CHEMISTRY AT LONG MEAN-FREE-PATHS

被引:12
作者
HARVEY, REP [1 ]
HITCHON, WNG [1 ]
PARKER, GJ [1 ]
机构
[1] UNIV WISCONSIN,DEPT PHYS,MADISON,WI 53706
关键词
D O I
10.1063/1.356341
中图分类号
O59 [应用物理学];
学科分类号
摘要
A long mean-free-path (Im ) model of transport of neutral particles has been developed and applied to the chemistry of a low neutral-pressure (less than or similar to 2 mTorr) plasma etching system. In cylindrical geometry, using coordinates (r,z) while ignoring angle phi, a transition matrix is set up for an arbitrary mfp that indicates the fraction of the particles originating in the cell at (r',z') that experience their next collision in the cell at (r,z). This matrix can be iterated, allowing for chemical reactions, to obtain the steady state density of the neutral species. It can also provide angular distributions of neutrals; at present, their energy distribution is not kept track of, although it will be in the future. The method has been applied to an electron cyclotron resonance plasma in CF4. Using the measured electron energy distribution, the breakdown of CF4 into the species responsible for etching is calculated. Densities of CF4, CF3, CF2, and F are presented for a wide range of conditions.
引用
收藏
页码:1940 / 1945
页数:6
相关论文
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