ELECTRON SPIN-FLIP RAMAN SCATTERING IN PBTE

被引:47
作者
PATEL, CKN
SLUSHER, RE
机构
[1] Bell Telephone Laboratories, Murray Hill
来源
PHYSICAL REVIEW | 1969年 / 177卷 / 03期
关键词
D O I
10.1103/PhysRev.177.1200
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We have observed electron spin-flip Raman scattering in n-PbTe using a 10.6-μ laser and magnetic fields up to 105 kOe. From g-value measurements in samples with 111, 110, and 100 along B, we obtain gII=57.5±2 and g=15±1. The gII is considerably larger than that deduced previously from injection-diode fluorescence and Shubnikov-de Haas measurements. The g measurement gives the first direct observation of anisotropy of g values in PbTe. The magnetic field dependence of intensity of spin-flip scattering for different g-value transitions indicates shifting of electrons from high g-value valleys to low g-value valleys. © 1969 The American Physical Society.
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页码:1200 / &
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