RADIATION-DAMAGE AND ANNEALING IN GAAS SOLAR-CELLS

被引：29

作者：

LOO, RY ^{[1
]}

KAMATH, GS ^{[1
]}

LI, SS ^{[1
]}

机构：

[1] UNIV FLORIDA,DEPT ELECT ENGN,GAINESVILLE,FL 32611

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1990年 / 37卷 / 02期

关键词：

D O I：

10.1109/16.46387

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reviews our work on radiation damage and annealing of GaAs cells for space power applications. We correlate the performance of cells before and after irradiation and after thermal annealing to the nature and density of defect centers identified using DLTS techniques. Two important deep levels are present in electron-and proton-irradiated GaAs cells (Ec - 0.71 eV and Ev + 0.71 eV). Our data from periodic and continuous annealing experiments show that GaAs cells are more radiation resistant than silicon and that the damage can be annealed at temperatures as low as 200°C. Based on our data, specific annealing schedules can be designed for GaAs solar panels that can greatly enhance the end-of-life efficiency of the cells for specific missions. © 1990 IEEE

引用

页码：485 / 497

页数：13

共 12 条

[1]

ANSPAUGH BE, 1984, 17TH P IEEE PHOT SPE, P23

[2]

Conway E. J., 1981, Fifteenth IEEE Photovoltaic Specialists Conference - 1981, P38

[3]

FAN JCC, COMMUNICATION

[4]

Heinbockel J. H., 1980, Fourteenth IEEE Photovoltaic Specialists Conference 1980, P1085

[5] LARGE-AREA HIGH-EFFICIENCY (ALGA)AS-GAAS SOLAR-CELLS [J].

KAMATH, GS ;

EWAN, J ;

KNECHTLI, RC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) :473-475

[6]

KIMERLING LC, 1976, IEEE T NUCL SCI 1, V23

[7]

KNECHTLI RC, 1984, IEEE T ELECTRON DEVI, V31

[8]

Loo R., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P562

[9]

Loo R., 1980, Fourteenth IEEE Photovoltaic Specialists Conference 1980, P1090

[10]

TADA HY, 1982, JPL PUBLICATION, V8269

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