MECHANICAL STRENGTH OF OXYGEN-DOPED FLOAT-ZONE SILICON-CRYSTALS

被引：16

作者：

SUMINO, K ^{[1
]}

YONENAGA, I ^{[1
]}

YUSA, A ^{[1
]}

机构：

[1] KOMATSU ELECTR MET CO LTD, HIRATSUKA, KANAGAWA 254, JAPAN

来源：

关键词：

D O I：

10.1143/JJAP.19.L763

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L763 / L766

页数：4

共 8 条

[1]

ALEXANDER H, 1968, SOLID STATE PHYS, V22, P28

[2] OXYGEN CONTENT OF SILICON SINGLE CRYSTALS [J].

KAISER, W ;

KECK, PH .

[3] IMPURITY CLUSTERING EFFECTS ON DISLOCATION GENERATION IN SILICON [J].

PATEL, JR .

DISCUSSIONS OF THE FARADAY SOCIETY, 1964, (38) :201-&

SUEZAWA, M ;

SUMINO, K ;

YONENAGA, I .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 51 (01) :217-226

SUMINO, K ;

HARADA, H ;

YONENAGA, I .

[6]

SUMINO K, 1980, P INT C DISLOCATION

YONENAGA, I ;

SUMINO, K .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 50 (02) :685-693

[8]

YONENAGA I, 1980, THESIS TOHOKU U