FABRICATION OF HIGH-QUALITY SUPERCONDUCTOR-INSULATOR-SUPERCONDUCTOR JUNCTIONS ON THIN SIN MEMBRANES

被引：5

作者：

GARCIA, E ^{[1
]}

JACOBSON, BR ^{[1
]}

HU, Q ^{[1
]}

机构：

[1] MIT,ELECTR RES LAB,CAMBRIDGE,MA 02139

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 07期

关键词：

D O I：

10.1063/1.109877

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have successfully fabricated high-quality and high-current density (J(c)almost-equal-to 4000 A/cm2) superconductor-insulator-superconductor (SIS) junctions on freestanding thin (approximately 1 mum) silicon nitride (SiN) membranes. These devices can be used in a novel millimeter-wave and THz receiver system which is made using micromachining. The SIS junctions with planar antennas were fabricated first on a silicon wafer covered with a SiN membrane, the Si wafer underneath was then etched away using an anisotropic KOH etchant. The current-voltage characteristics of the SIS junctions remained unchanged after the whole process, and the junctions and the membrane survived thermal cycling.

引用

页码：1002 / 1004

页数：3

共 11 条

[1]

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[2]

BECK PA, 1990, MATER RES SOC S P, V182, P207

[3] NB/ALOX/NB TRILAYER PROCESS FOR THE FABRICATION OF SUBMICRON JOSEPHSON-JUNCTIONS AND LOW-NOISE DC SQUIDS [J].