EXCITONIC LIGHT-REFLECTION AND ABSORPTION IN SEMICONDUCTOR MICROCAVITIES AT OBLIQUE-INCIDENCE

Exact calculations of TE and TM polarized light reflection and absorption spectra have been performed for a semiconductor microcavity containing an embedded quantum well (QW) in the QW exciton resonance region. The approach is based on the transfer matrix method and theory of nonlocal dielectric response. Rabi splitting of polariton branches as function of the incidence angle has been calculated. For the first time, the triplet structure has been found in reflectivity and absorption spectra at the light hole exciton resonance in oblique incidence geometry and the dispersion of light hole exciton polaritons is calculated.