CRYSTAL-GROWTH, ATOMIC ORDERING, AND PHYSICAL-PROPERTIES OF EPITAXIAL METASTABLE SEMICONDUCTORS

被引：11

作者：

GREENE, JE ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT MAT SCI,MAT RES LAB,URBANA,IL 61801

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1987年 / 5卷 / 04期

关键词：

D O I：

10.1116/1.574887

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1947 / 1948

页数：2

共 17 条

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[5] A REVIEW OF RECENT RESEARCH ON THE GROWTH AND PHYSICAL-PROPERTIES OF SINGLE-CRYSTAL METASTABLE ELEMENTAL AND ALLOY SEMICONDUCTORS
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[7] HOLLOWAY H, UNPUB
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[9] RAMAN-SCATTERING FROM CRYSTALLINE AND AMORPHOUS (GASB)1-XGEX SEMICONDUCTING-FILMS
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[J]. SOLID STATE COMMUNICATIONS, 1983, 45 (10) : 895 - 898
[10] KRAMER B, UNPUB