DELAY TIME STUDIES AND ELECTRON-MOBILITY MEASUREMENT IN AN A-SI-H TFT

被引:6
作者
BASHIR, R
SUBRAMANIAN, CK
NEUDECK, GW
CHUNG, KY
机构
关键词
D O I
10.1109/16.40960
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:2944 / 2948
页数:5
相关论文
共 6 条
[1]  
BURNS JR, 1969, RCA REV MAR, P15
[2]   ANALYTICAL MODELING OF A-SI-H THIN-FILM TRANSISTORS [J].
CHUNG, KY ;
NEUDECK, GW .
JOURNAL OF APPLIED PHYSICS, 1987, 62 (11) :4617-4624
[3]  
EINSPRUCH NG, 1985, VSLI ELECTRONICS MIC, V10
[4]   THE CHARACTERISTICS AND PROPERTIES OF OPTIMIZED AMORPHOUS-SILICON FIELD-EFFECT TRANSISTORS [J].
MACKENZIE, KD ;
SNELL, AJ ;
FRENCH, I ;
LECOMBER, PG ;
SPEAR, WE .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 31 (02) :87-92
[5]   THE ENERGY-DISTRIBUTION OF LOCALIZED STATES, AND THE MOBILITIES OF FREE-CARRIERS IN A-SI-H, FROM TIME OF FLIGHT AND OTHER MEASUREMENTS [J].
MARSHALL, JM ;
STREET, RA ;
THOMPSON, MJ ;
JACKSON, WB .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 :563-566
[6]  
PANKOVE JI, 1984, SEMICONDUCTORS SEMIM, V21