STRAINED-LAYER INGAAS INALAS MULTIPLE QUANTUM-WELLS FOR EFFICIENT OPTICAL WAVE-GUIDE MODULATION AT 1.55-MU-M

被引：14

作者：

BIGAN, E

ALLOVON, M

CARRE, M

CARENCO, A

机构：

[1] Centre National d'Etudes des Télécommunications, Laboratoire de Bagneux, 92220 Bagneux

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 06期

关键词：

Modulation; Optical communications;

D O I：

10.1049/el:19900231

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Strain is used to tailor the absorption edge of thick (100 Å) quantum wells. This allows efficient modulation at 1.55μm. An extinction ratio of 18 dB has been achieved by applying a reverse bias of 6 V to a 160μm long waveguide device. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：355 / 357

页数：3

共 7 条

[1] VARIATIONAL CALCULATIONS ON A QUANTUM WELL IN AN ELECTRIC-FIELD [J].