THERMAL-CONVERSION MECHANISM IN SEMI-INSULATING GAAS

被引：9

作者：

OHNO, H

USHIROKAWA, A

KATODA, T

机构：

[1] Institute of Space and Aeronautical Science, University of Tokyo, Meguro-ku

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 12期

关键词：

D O I：

10.1063/1.325921

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Formation of both p- and n-type thermally converted surface layers in semi-insulating GaAs is explained in terms of outdiffusion of impurities. Carrier concentrations and impurity profiles calculated on the basis of this outdiffusion model are in close agreement with the experimental values which were obtained by Hall measurements on a variety of heat-treated samples. This excellent agreement is further backed by the mass-spectrometric data and gives strong evidence to the adequacy of the model.

引用

页码：8226 / 8228

页数：3

共 7 条

[1] Casey H.C., 1973, ATOMIC DIFFUSION SEM, P351
[2] HALLAIS J, 1977, GAAS RELATED COMPOUN, P220
[3] KOSCHEL WH, 1977, GALLIUM ARSENIDE REL, P98
[4] MODEL RELATING ELECTRICAL-PROPERTIES AND IMPURITY CONCENTRATIONS IN SEMI-INSULATING GAAS
LINDQUIST, PF
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 1262 - 1267
[5] THERMALLY CONVERTED SURFACE-LAYERS IN SEMI-INSULATING GAAS
LUM, WY
WIEDER, HH
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (03) : 213 - 215
[6] DIFFUSION AND DETECTION OF OXYGEN IN GAAS
RACHMANN, J
BIERMANN, R
[J]. SOLID STATE COMMUNICATIONS, 1969, 7 (24) : 1771 - &
[7] TUCK B, 1974, INTRO DIFFUSION SEMI, P30

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