EFFECT OF P3/2 INTRABAND POLARIZATION ON MOBILITY OF ZERO-GAP SEMICONDUCTORS

被引：25

作者：

BROERMAN, JG

LIU, L

PATHAK, KN

机构：

来源：

PHYSICAL REVIEW B-SOLID STATE | 1971年 / 4卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.4.664

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：664 / +

共 24 条

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[8]

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[9] POSSIBLE ANOMALIES AT A SEMIMETAL-SEMICONDUCTOR TRANSISTION [J].

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[10]

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