PHOTOCURRENT MULTIPLICATION AT P-TYPE SEMICONDUCTOR ELECTRODES

被引：22

作者：

KELLY, JJ ^{[1
]}

MINKS, BP ^{[1
]}

VERHAEGH, NAM ^{[1
]}

STUMPER, J ^{[1
]}

PETER, LM ^{[1
]}

机构：

[1] UNIV SOUTHAMPTON,DEPT CHEM,SOUTHAMPTON SO9 5NH,HANTS,ENGLAND

来源：

ELECTROCHIMICA ACTA | 1992年 / 37卷 / 05期

关键词：

CHEMICAL ETCHING; CURRENT-DOUBLING; IODATE; GAAS; IMPS;

D O I：

10.1016/0013-4686(92)85042-J

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A review is presented of photoelectrochemical systems which at p-type semiconductor electrodes give a quantum efficiency greater than one. The use of intensity modulated photocurrent spectroscopy (IMPS) for studying such systems is considered. Special attention is devoted to the mechanism of current-doubling at p-GaAs caused by oxidizing agents which also etch the semiconductor chemically. New data are presented for the photocathodic reduction of iodate in alkaline solution at p-GaAs. At low light intensity this system gives a quantum efficiency (Q) close to 6.

引用

页码：909 / 918

页数：10

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