EXCITATION MECHANISMS OF RARE-EARTH (YB) LUMINESCENCE IN III-V SEMICONDUCTORS (INP)

被引：11

作者：

LHOMER, C

LAMBERT, B

TOUDIC, Y

LECORRE, A

GAUNEAU, M

CLEROT, F

SERMAGE, B

机构：

[1] CNET-LAB-OCM, Lannion

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1991年 / 6卷 / 09期

关键词：

D O I：

10.1088/0268-1242/6/9/014

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, thermal dependent Hall effect and time-resolved band edge photoluminescence on rare earth (Yb) doped indium phosphide are reported. The presence of two different traps related to the rare earth is clearly demonstrated. A very efficient trapping is observed in time resolved photoluminescence. The variations of the band edge luminescence decay time with temperature and excitation density lead us to consider the trapping of both electrons and holes on the rare earth site. We propose a model based on the creation of bound exciton trapped on the rare earth site which allows us to account for both the electrical and optical properties of rare earth in III-V compounds. The reasonable quantitative agreement between this model, time-resolved and CW photoluminescence data is shown and discussed.

引用

页码：916 / 923

页数：8

共 17 条

[1]

Ennen H, Schneider J, 30, 10, (1984)

[2]

Masterov VF, Zakharenkov LF, Sov. Phys.-Semicond., 24, (1990)

[3]

Withney PS, Uwai K, Nakagome H, Takahei K, Appl. Phys. Lett., 53, 21, (1988)

[4]

Lambert B, Toudic Y, Grandpierre G, Rupert A, Le Corre A, Electron. Lett., 24, 23, (1988)

[5]

Hemstreet LA, Mater. Res. Soc. Symp. Proc., 104, (1988)

[6]

Korber W, Hangleiter A, Appl. Phys. Lett., 52, 2, (1988)

[7]

Lambert B, Le Corre A, Toudic Y, Lhomer C, Grandpierre G, Gauneau M, J. Phys. Condens. Matter, 2, 2, (1990)

[8]

Coquille R, Toudic Y, Gauneau M, Grandpierre G, Paris JC, J. Cryst. Growth, 64, (1988)

[9]

Allen JW, J. Phys. C: Solid State Phys., 4, 14, (1971)

[10]

Klein PB, Solid State Commun., 65, 10, (1988)

← 1 2 →