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APPLYING THE MARX BANK CIRCUIT CONFIGURATION TO POWER MOSFETS
被引：8
作者：
BAKER, RJ
JOHNSON, BP
机构：
[1] Department of Electrical Engineering, University of Nevada, Reno
关键词：
CIRCUIT DESIGN;
PULSE GENERATION;
POWER MOSFETS;
D O I：
10.1049/el:19930037
中图分类号：
TM [电工技术];
TN [电子技术、通信技术];
学科分类号：
0808 ;
0809 ;
摘要：
Power MOSFETs operated in a Marx bank circuit configuration are presented. This circuit is useful for generating high voltage (greater than 1 kV) nanosecond risetime pulses. After the design procedure is given an example circuit is designed which generates a - 1800 V pulse with a 3-0 ns falltime into 50 OMEGA.
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页码：56 / 57
页数：2
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