EXCITONIC RESONANCE RAMAN-SCATTERING FROM OPTIC POLAR PHONONS IN AGGAS2

被引：8

作者：

DEB, SK

ROY, AP

机构：

[1] Solid State Physics Division Bhabha Atomic Research Centre, Bombay

来源：

SOLID STATE COMMUNICATIONS | 1994年 / 90卷 / 01期

关键词：

D O I：

10.1016/0038-1098(94)90952-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The low temperature optical properties of the chalcopyrite semiconductor AgGaS2 is dominated by well defined excitonic level. We report here exciton mediated resonance Raman scattering from B2(LO) and E(LO) polar phonons at 235 cm-1 and 230 cm-1 respectively as a function of temperature over 20K to 200K. The variation in resonance enhancement of these modes with temperature could be explained assuming an exciton width of the form GAMMA(T)= a + bT + cT2 ie,the exciton decaying into one and two acoustic phonons. The agreement between the experiment and theory is very good. We also argue that the enhancement is due to Frohlich forbidden LO phonon-exciton coupling.

引用

页码：7 / 11

页数：5

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