Texture, structure and domain microstructure of ferroelectric PZT thin films

被引：14

作者：

Hector, J

Floquet, N

Niepce, C

Gaucher, P

Ganne, JP

机构：

[1] Laboratoire de Recherches sur la Réactivité, Solides - U.R.A. C.N.R.S.23 - Université, Bourgogne - Faculté des Sciences Mirande -, 21004 Dijon Cedex

[2] Laboratoire Central de Recherches - Thomson-CSF - Domaine de Corbeville

来源：

MICROELECTRONIC ENGINEERING | 1995年 / 29卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(95)00161-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ferroelectric thin films with different compositions from PZT 50/50 to PbTiO3 were prepared by a modified sol-gel process and deposited by spin-coating on Pt/Ti/SiO2/Si(100)wafer. The ferroelectric and dielectric properties of the thin films dependent on thin film composition are presented and compared with bulk ceramic properties. The results correlated with the crystal structure and ferroelectric domain microstucture of PZT crystallites determined by X-ray diffraction. The influence of the sol-gel film process on the ferroelectric properties, the crystallite texture, structure and domain microstructure is discussed.

引用

页码：285 / 288

页数：4