CHIP ORGANIZATION OF BLOCH LINE MEMORY

被引：51

作者：

SUZUKI, T ^{[1
]}

ASADA, H ^{[1
]}

MATSUYAMA, K ^{[1
]}

FUJITA, E ^{[1
]}

SAEGUSA, Y ^{[1
]}

MORIKAWA, K ^{[1
]}

FUJIMOTO, K ^{[1
]}

SHIGENOBU, M ^{[1
]}

NAKASHI, K ^{[1
]}

TAKAMATSU, H ^{[1
]}

HIDAKA, Y ^{[1
]}

KONISHI, S ^{[1
]}

机构：

[1] NEC CORP,MICROELECTR RES LABS,MIYAMAE KU,KAWASAKI,KANAGAWA 213,JAPAN

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1986年 / 22卷 / 05期

关键词：

D O I：

10.1109/TMAG.1986.1064520

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：784 / 789

页数：6

共 10 条

[1] STRIPE DOMAINS STABILIZATION FOR BLOCH LINE MEMORY [J].

ARNAUD, L ;

BOILEAU, F .

JOURNAL DE PHYSIQUE, 1985, 46 (C-6) :137-140

[2] COMPUTER-SIMULATION OF THE MOTION OF MAGNETIC DOMAIN-WALL BASED ON LUMPED-CONSTANT MODEL OF VERTICAL BLOCH LINES [J].

HAYASHI, N ;

NAKATANI, Y .

IEEE TRANSACTIONS ON MAGNETICS, 1985, 21 (05) :1767-1769

[3] 1K BIT BUBBLE LATTICE STORAGE DEVICE - INITIAL TESTS [J].

HU, HL ;

BEAULIEU, TJ ;

CHAPMAN, DW ;

FRANICH, DM ;

HENRY, GR ;

ROSIER, LL ;

SHEW, LF .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (03) :1913-1917

[4] BLOCH LINE MEMORY - DAMS FOR STRIPE DOMAIN CONFINEMENT [J].

KLEIN, D ;

ENGEMANN, J .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) :4071-4073

[5] A NEW ULTRA-HIGH-DENSITY SOLID-STATE MEMORY - BLOCH LINE MEMORY [J].

KONISHI, S .

IEEE TRANSACTIONS ON MAGNETICS, 1983, 19 (05) :1838-1840

[6]

MATSUTERA H, INTERMAG 86

[7] COMPUTER-SIMULATION OF VERTICAL BLOCH LINE PROPAGATION AROUND STRIPE DOMAIN HEAD [J].

MATSUYAMA, K ;

ASADA, H ;

KONISHI, S .

IEEE TRANSACTIONS ON MAGNETICS, 1985, 21 (05) :1770-1772

[8]

MATSUYAMA K, 1984, 8TH ANN C MAG JAP

[9] MATERIAL CONSIDERATION FOR VERTICAL BLOCH LINE MEMORY [J].

RONAN, G ;

CLEGG, W ;

KONISHI, S .

JOURNAL DE PHYSIQUE, 1985, 46 (C-6) :127-130

[10] OPERATION OF A VBL MEMORY WRITE GATE [J].

WU, JC ;

HUMPHREY, FB .

IEEE TRANSACTIONS ON MAGNETICS, 1985, 21 (05) :1773-1775

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