DOMAIN SUPPRESSION IN GUNN DIODES

被引：13

作者：

KURU, I

TAJIMA, Y

机构：

[1] Central Research Laboratory, Tokyo Shibaura Electric Co., Ltd., Kawasaki

来源：

PROCEEDINGS OF THE IEEE | 1969年 / 57卷 / 06期

关键词：

D O I：

10.1109/PROC.1969.7205

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Gunn domains were suppressed in Gunn diodes by side loading them with dielectrics of high permittivity or making them very thin. Results obtained on an experimental model suggest that electric lines of force leak out of the diodes. Copyright © 1969 by The Inshtute of Electrical and Electronics Engineers Inc.

引用

页码：1215 / +

页数：1

共 5 条

[1] ENGELMANN R, 1968, 7 INT C MICR OPT GEN
[2] KATAOKA S, 1968, 7 P INT C MICR OPT G
[3] EFFECT OF SMALL TRANSVERSE DIMENSIONS ON OPERATION OF GUNN DEVICES
KINO, GS
ROBSON, PN
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (11): : 2056 - +
[4] KUMABE K, 1968, JAN EL DEV GROUP M I
[5] SOME MEASUREMENGS OF STEADY-STATE AND TRANSIENT CHARACTERISTICS OF HIGH-FIELD DIPOLE DOMAINS IN GAAS
KURU, I
ROBSON, PN
KINO, GS
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (01) : 21 - +

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